Title :
Radiation effects on the AT&T CBIC linear bipolar process
Author :
Combs, William E. ; Krieg, Jeffery F. ; Cole, Patrick L. ; Eiche, Barry E.
Author_Institution :
Crane Ind., Naval Surface Warfare Center, Crane, IN, USA
Abstract :
Transistors and commercial operational amplifiers from the AT&T CBIC-R, CBIC-U2 and CBIC-V2 bipolar processes were tested to Co60 ionizing radiation. High and low rate Co60 dose rates were used along with various bias conditions. The data shows the CBIC-U2 process amplifiers to be tolerant to total ionizing dose of 10 Mrad(SiO2). The CBIC-V2 amplifiers show minor effects at 100 krad(SiO2). The CBIC-R amplifiers show significant loss of transresistance by 1 Mrad. Bandwidth and total harmonic distortion were checked pre-rad and post-rad and no degradation was found.
Keywords :
bipolar analogue integrated circuits; bipolar transistors; harmonic distortion; integrated circuit testing; operational amplifiers; radiation effects; semiconductor device testing; 1E5 to 1E6 rad; 60Co ionizing radiation; AT&T bipolar process; CBIC linear bipolar process; CBIC-R; CBIC-U2; CBIC-V2; Co; THD; bandwidth; bias conditions; commercial op amps; high dose rates; low dose rates; operational amplifiers; radiation effects; total harmonic distortion; transistors; transresistance loss; Automatic control; Degradation; Operational amplifiers; Performance evaluation; Pins; Radiation effects; Relays; Sockets; Testing; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
DOI :
10.1109/REDW.1994.633043
