Class E power amplifier design with a modified load network

A subclass class E power amplifier is proposed in this paper, and the new circuit topology and the basic principles are covered too. For simplicity, the theoretical results are directly given in a table compared to the typical class E amplifier´s performance. With the same resistance load, the output voltage is 24% higher. The designed shunt capacitance is about 67% more. With the same output power requirements, the voltage stress on device is about 20% less. The validity and feasibility of the new modified class E power amplifier are proved by a simulation and an experiment circuits. The design example uses an LDMOS transistor, MRF21010. The amplifier´s power added efficiency (PAE) is 83.4% and output power is 33 dBm at 200 MHz.