Title :
Design of a low noise amplifier with GaAs MESFET at ku_Band
Author :
Islam, Mohammed Rafiqul ; Alam, A. H M Zahirul ; Khan, Sheroz ; Shabana, Arafat A A
Author_Institution :
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
Abstract :
A Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316 mm2. The LNA is designed to operate at 12 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; low noise amplifiers; microwave amplifiers; satellite communication; AWR Ver. 2006; GaAs; Ku-band low noise amplifier; LNA; MESFET; Microwave Office Simulator; frequency 12 GHz; gain 8.90 dB; monolithic chip; noise figure 2.19 dB; satellite receiver; Gain; Gallium arsenide; MMICs; Microwave amplifiers; Noise; Noise figure; Transistors; Gain; Low noise amplifier (LNA); Noise figure; Stability;
Conference_Titel :
Computer and Communication Engineering (ICCCE), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6233-9
DOI :
10.1109/ICCCE.2010.5556786
