DocumentCode
1802921
Title
Design of a low noise amplifier with GaAs MESFET at ku_Band
Author
Islam, Mohammed Rafiqul ; Alam, A. H M Zahirul ; Khan, Sheroz ; Shabana, Arafat A A
Author_Institution
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
fYear
2010
fDate
11-12 May 2010
Firstpage
1
Lastpage
5
Abstract
A Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316 mm2. The LNA is designed to operate at 12 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; low noise amplifiers; microwave amplifiers; satellite communication; AWR Ver. 2006; GaAs; Ku-band low noise amplifier; LNA; MESFET; Microwave Office Simulator; frequency 12 GHz; gain 8.90 dB; monolithic chip; noise figure 2.19 dB; satellite receiver; Gain; Gallium arsenide; MMICs; Microwave amplifiers; Noise; Noise figure; Transistors; Gain; Low noise amplifier (LNA); Noise figure; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer and Communication Engineering (ICCCE), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-6233-9
Type
conf
DOI
10.1109/ICCCE.2010.5556786
Filename
5556786
Link To Document