Effect of Reverse Gate Bias on hot-carrier reliability in OCB Trench MOSFET for solar cell applications

Author

Jin, Minghao ; Fu, Xiao

Author_Institution

Joule Phys. Lab., Univ. of Salford, Salford, UK

fYear

2012

fDate

7-8 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

This work describes the hot carrier reliability analysis of a 100 V Oxide Charge Balanced (OCB) Trench MOSFET in solar cell applications. Device degradation is studied on the OFF states with a Reverse Gate Bias (RGB) condition. The detail of the properly designed experiment is presented, which identifies distinctive acceleration phenomenon associated to Hot Carrier Injection (HCI). Adopting the TCAD simulation tools, the electrical characteristics of OCB trench MOSFET under reverse gate bias stress condition has been properly-calibrated. The mechanism underlying HCI degradation that affects the OFF state lifespan of an OCB device is explained.

Keywords

MOSFET; hot carriers; semiconductor device reliability; solar cells; HCI; OCB trench MOSFET; RGB condition; TCAD simulation tools; acceleration phenomenon; device degradation; electrical characteristics; hot carrier injection; hot carrier reliability analysis; hot-carrier reliability; oxide charge balanced trench MOSFET; reverse gate bias effect; reverse gate bias stress condition; solar cell applications; voltage 100 V; Degradation; Hot carriers; Human computer interaction; Logic gates; MOSFET circuits; Stress; Threshold voltage; HCI; OCB Trench MOSFET; TCAD simulation; hot carrier degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Automation and Computing (ICAC), 2012 18th International Conference on

Conference_Location

Loughborough

Print_ISBN

978-1-4673-1722-1

Type

conf

Filename

6330522