Title :
A 60-GHz power amplifier and transmit/receive switch for integrated CMOS wireless transceivers
Author :
Wicks, Byron ; Ta, Chien M. ; Skafidas, Efstratios ; Evans, Robin J. ; Mareels, Iven
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC
Abstract :
The design of two critical building blocks for the realization of an all-integrated transceiver, the power amplifier (PA) and the transmit/receive switch (T/R switch), using a 130-nm CMOS process will be presented. The PA operating from a 2.5-V supply exhibits an output referred P1dB of 9.0 dB, a PSAT of+13.1 dBm, with peak power gain of 14.9 dB, a 3-dB bandwidth of 6.7 GHz, and 2.8 % power added efficiency (PAE). The T/R switch has an insertion loss from 3.5 to 4.9 dB, an isolation between transmit and receive ports better than 30 dB, and return losses at active ports less than -11 dB across the 57-66 GHz band. The input referred P1dB of the switch is 7.2 dBm.
Keywords :
CMOS integrated circuits; field effect MIMIC; microwave switches; millimetre wave power amplifiers; transceivers; bandwidth 6.7 GHz; frequency 57 GHz to 66 GHz; gain 14.9 dB; insertion loss; integrated CMOS wireless transceivers; loss 3.5 dB to 14.9 dB; peak power gain; power added efficiency; power amplifier; size 130 nm; transmit/receive switch; voltage 2.5 V; CMOS process; CMOS technology; Insertion loss; Power amplifiers; Propagation losses; Radio frequency; Radiofrequency amplifiers; Signal design; Switches; Transceivers;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540328
