DocumentCode
1803170
Title
Characterization of the noise performance of a cryogenically-cooled HEMT Low-Noise Amplifier
Author
Li, Ning ; Zuo, Ying-Xi ; Xu, Jian ; Ren, Yuan ; Huang, Shu-Pin ; Shi, Sheng-Cai
Volume
1
fYear
2008
fDate
21-24 April 2008
Firstpage
182
Lastpage
185
Abstract
In this paper three methods are employed to characterize the equivalent input noise temperature of a cryogenically-cooled IF HEMT LNA. They are the conventional Y- factor method, variable-temperature method and shot-noise method. Through the measurements, their merits and drawbacks are compared.
Keywords
high electron mobility transistors; low noise amplifiers; semiconductor device noise; HEMT low-noise amplifier; Y-factor method; equivalent input noise temperature; shot-noise method; variable-temperature method; Coaxial cables; HEMTs; Low-noise amplifiers; Noise measurement; Superconducting cables; Superconducting device noise; Superconducting devices; Superconducting transition temperature; Temperature distribution; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-1879-4
Electronic_ISBN
978-1-4244-1880-0
Type
conf
DOI
10.1109/ICMMT.2008.4540335
Filename
4540335
Link To Document