Performance analysis of a boost inverter with a silicon carbide device for commercial applications

Silicon Carbide (SiC) devices provides for better performance in photovoltaic (PV) and distributed energy resource (DER) inverters. Switches based on SiC can tolerate higher temperatures, accommodates high voltages, and can operate at higher frequencies. The boost inverter presented is a single stage inverter topology that lowers or attenuates the input dc voltage creating an ac output voltage. Grid reliability is improved through the integration of silicon carbide devices in technologies such as the boost inverter which provides for improved efficiency and lower cost for grid connection. A novel Gallium Arsenide (GaAs) photovoltaic device is also discussed and chosen as the dc source to the boost inverter due to its high absorptivity and insensitivity to heat thus allowing for increased energy conversion. A low power prototype is designed to show that the proposed system serves as a feasible renewable energy system for commercial and industrial applications.