DocumentCode
1803215
Title
A highly linear low-voltage MOS transconductor
Author
Leuciuc, Adrian ; Zhang, Yi
Author_Institution
Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume
3
fYear
2002
fDate
2002
Abstract
This paper presents a new linear MOS transconductor consisting of a differential pair with resistive source degeneration and an extra pair of op-amps to increase the linearity. The proposed transconductor operates at a 1.8 V supply voltage and the achieved THD is better than -80 dB up to 2.5 MHz for a 0.8 V p-p input differential voltage.
Keywords
MOS analogue integrated circuits; harmonic distortion; low-power electronics; operational amplifiers; 1.8 V; 2.5 MHz; THD; differential pair; linear low-voltage MOS transconductor; operational amplifier; resistive source degeneration; Bandwidth; Circuit analysis; Delta modulation; Linearity; MOSFETs; Mirrors; Operational amplifiers; Resistors; Transconductors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN
0-7803-7448-7
Type
conf
DOI
10.1109/ISCAS.2002.1010329
Filename
1010329
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