Title :
A highly linear low-voltage MOS transconductor
Author :
Leuciuc, Adrian ; Zhang, Yi
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY, USA
Abstract :
This paper presents a new linear MOS transconductor consisting of a differential pair with resistive source degeneration and an extra pair of op-amps to increase the linearity. The proposed transconductor operates at a 1.8 V supply voltage and the achieved THD is better than -80 dB up to 2.5 MHz for a 0.8 V p-p input differential voltage.
Keywords :
MOS analogue integrated circuits; harmonic distortion; low-power electronics; operational amplifiers; 1.8 V; 2.5 MHz; THD; differential pair; linear low-voltage MOS transconductor; operational amplifier; resistive source degeneration; Bandwidth; Circuit analysis; Delta modulation; Linearity; MOSFETs; Mirrors; Operational amplifiers; Resistors; Transconductors; Voltage;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010329
