DocumentCode
1803462
Title
Potential/charge balance model for a floating gate EEPROM cell
Author
Phillips, Andrew Brian ; Ho, Fat Duen
Author_Institution
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
Volume
3
fYear
2002
fDate
2002
Firstpage
783
Lastpage
785
Abstract
This paper develops an EEPROM cell model using potential and charge balance principles for the purpose of modeling the tunnel current and cell threshold voltage. The model is applied using a methodology previously presented in literature, and the results compared to experimental data as well as two different capacitor models previously presented in literature
Keywords
EPROM; MOSFET; circuit simulation; electric charge; integrated circuit design; integrated circuit modelling; tunnelling; MOS transistors; capacitor EEPROM cell models; cell threshold voltage; charge balance model; floating gate EEPROM cell; potential model; tunnel current modeling; Capacitance; Circuit simulation; EPROM; Equivalent circuits; Implants; MOS capacitors; MOSFETs; Poisson equations; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Conference_Location
Phoenix-Scottsdale, AZ
Print_ISBN
0-7803-7448-7
Type
conf
DOI
10.1109/ISCAS.2002.1010341
Filename
1010341
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