Title :
Potential/charge balance model for a floating gate EEPROM cell
Author :
Phillips, Andrew Brian ; Ho, Fat Duen
Author_Institution :
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
Abstract :
This paper develops an EEPROM cell model using potential and charge balance principles for the purpose of modeling the tunnel current and cell threshold voltage. The model is applied using a methodology previously presented in literature, and the results compared to experimental data as well as two different capacitor models previously presented in literature
Keywords :
EPROM; MOSFET; circuit simulation; electric charge; integrated circuit design; integrated circuit modelling; tunnelling; MOS transistors; capacitor EEPROM cell models; cell threshold voltage; charge balance model; floating gate EEPROM cell; potential model; tunnel current modeling; Capacitance; Circuit simulation; EPROM; Equivalent circuits; Implants; MOS capacitors; MOSFETs; Poisson equations; Threshold voltage; Voltage control;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Conference_Location :
Phoenix-Scottsdale, AZ
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010341
