DocumentCode :
1803614
Title :
Integrated HF CMOS-MEMS square-frame resonators with on-chip electronics and electrothermal narrow gap mechanism
Author :
Lo, Chiung-Cheng ; Chen, Fang ; Fedder, G.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
2
fYear :
2005
fDate :
5-9 June 2005
Firstpage :
2074
Abstract :
A fully differential square frame resonator (SFR), operating at resonant frequencies of 6.184MHz and 17.63MHz for the fundamental and 2nd harmonic, respectively, is introduced, which is the highest resonant frequency reported to date in CMOS-MEMS technology. In-plane CMOS-MEMS resonators have been fabricated directly on a conventional CMOS substrate with on-chip differential amplifiers. To enhance the output motional current, an electrothermal-actuated electrode is designed to reduce the input/output capacitive gap. A 5μm-thick, 4 μm-wide, 63 μm-long SFR with fixed electrodes exhibits a quality factor of 996 in vacuum at 6.18MHz.
Keywords :
CMOS integrated circuits; differential amplifiers; integrated circuit design; micromechanical resonators; 17.63 MHz; 4 micron; 5 micron; 6.184 MHz; 63 micron; HF CMOS-MEMS; differential amplifiers; electrothermal narrow gap mechanism; harmonics; integrated resonator; on-chip electronics; resonant frequency; square frame resonators; Band pass filters; CMOS technology; Differential amplifiers; Electrodes; Electrothermal effects; Hafnium; Micromechanical devices; Resonance; Resonant frequency; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
Type :
conf
DOI :
10.1109/SENSOR.2005.1497511
Filename :
1497511
Link To Document :
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