Title :
170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier
Author :
Testa, Paolo Valerio ; Belfiore, G. ; Fritsche, David ; Carta, C. ; Ellinger, F.
Author_Institution :
Tech. Univ. Dresden, Dresden, Germany
Abstract :
This paper presents a travelling-wave amplifier (TWA) for wideband applications implemented in a 0.13 μm SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). The gain cell employed in the TWA is designed to compensate the transmission-line- losses at high frequencies in order to extend the bandwidth as well as the gain bandwidth product (GBP). A gain of 10 dB and a 3-dB bandwidth of 170 GHz are measured for the fabricated TWA. The chip has a chip area of 0.38 mm2 and a power consumption of 108 mW. Compared against the state of the art, the presented design achieves the highest reported GBP per area and power consumption.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MIMIC; distributed amplifiers; millimetre wave amplifiers; semiconductor materials; transmission lines; travelling wave amplifiers; BiCMOS loss-compensated distributed amplifier; GBP; SiGe; TWA; frequency 170 GHz; gain 10 dB; gain bandwidth product; power 108 mW; power consumption; size 0.13 mum; transmission-line-losses; travelling-wave amplifier; Bandwidth; BiCMOS integrated circuits; CMOS integrated circuits; Distributed amplifiers; Gain; Silicon germanium; Transmission line measurements;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978523
