DocumentCode
1803891
Title
CMOS handset power amplifiers: Directions for the future
Author
Asbeck, Peter ; Larson, Lawrence ; Kimball, Donald ; Buckwalter, James
Author_Institution
Univ. of California, La Jolla, CA, USA
fYear
2012
fDate
9-12 Sept. 2012
Firstpage
1
Lastpage
6
Abstract
While the present market for power amplifiers in wireless handsets is largely met by GaAs HBTs, CMOS technology can provide major advantages including high integration levels, scalability, and digital control. This paper reviews possible directions for future CMOS PA development including FET stacking, envelope tracking, digital predistortion, and new architectures based on digital control, that promise to add to the advantages of CMOS in LTE applications.
Keywords
CMOS analogue integrated circuits; Long Term Evolution; digital control; field effect transistors; mobile handsets; power amplifiers; CMOS PA development; CMOS handset power amplifier; CMOS technology; FET stacking; LTE application; digital control; digital predistortion; envelope tracking; high integration level; wireless handset; CMOS integrated circuits; FETs; Power amplifiers; Power generation; Radio frequency; Switches; Telephone sets;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location
San Jose, CA
ISSN
0886-5930
Print_ISBN
978-1-4673-1555-5
Electronic_ISBN
0886-5930
Type
conf
DOI
10.1109/CICC.2012.6330561
Filename
6330561
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