Title :
CMOS handset power amplifiers: Directions for the future
Author :
Asbeck, Peter ; Larson, Lawrence ; Kimball, Donald ; Buckwalter, James
Author_Institution :
Univ. of California, La Jolla, CA, USA
Abstract :
While the present market for power amplifiers in wireless handsets is largely met by GaAs HBTs, CMOS technology can provide major advantages including high integration levels, scalability, and digital control. This paper reviews possible directions for future CMOS PA development including FET stacking, envelope tracking, digital predistortion, and new architectures based on digital control, that promise to add to the advantages of CMOS in LTE applications.
Keywords :
CMOS analogue integrated circuits; Long Term Evolution; digital control; field effect transistors; mobile handsets; power amplifiers; CMOS PA development; CMOS handset power amplifier; CMOS technology; FET stacking; LTE application; digital control; digital predistortion; envelope tracking; high integration level; wireless handset; CMOS integrated circuits; FETs; Power amplifiers; Power generation; Radio frequency; Switches; Telephone sets;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1555-5
Electronic_ISBN :
0886-5930
DOI :
10.1109/CICC.2012.6330561
