Title :
Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT
Author :
Huiming Xu ; Wu, Bin ; Winoto, Ardy ; Feng, Ming
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
An AlInP emitter ledge (EL) has been developed for a Type-II GaAsSb/InP DHBT with doping-graded base. The AlInP emitter ledge has effectively reduced emitter peripheral surface recombination current, thus improving current gain. A 0.25 x 5 μm2 device has demonstrated maximum current gain β = 24, BVCEO = 6.3 V and fT/fMAX = 480/620 GHz. RF performances of 600+ GHz Type II DHBTs with and without emitter ledge have also been compared.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; surface recombination; AlInP; GaAsSb-InP; doping graded base; emitter ledge type II DHBT; emitter peripheral surface recombination current; frequency 480 GHz; frequency 620 GHz; voltage 6.3 V; Color; Current density; DH-HEMTs; Indium phosphide; Metals; Performance evaluation; Silicon;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978537
