Title :
Future of GaN RF Technology in Europe
Author :
Blanck, H. ; Splettstober, J. ; Floriot, D.
Author_Institution :
United Monolithic Semicond. GmbH, Ulm, Germany
Abstract :
In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.
Keywords :
III-V semiconductors; gallium compounds; product development; research and development; semiconductor industry; wide band gap semiconductors; Europe; GaN; RF technology; industrialization; product development; research and development; Europe; Gallium nitride; HEMTs; MMICs; Materials; Microwave technology; Performance evaluation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978556