Title :
New pixel-shared design and split-path readout of CMOS image sensor circuits
Author :
Chow, Hwang-Cherng ; Yung-Kuo Ho
Author_Institution :
Inst. of Semicond. Technol., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
This paper reports a CMOS active pixel sensor (APS) of 128×128 resolution designed for high quantum efficiency. This kind of image sensor can be operated under 3.3 V, and use a new structure of shared-pixel and split-path readout direction. This method has the advantage that the number of transistors in each pixel is reduced to increase the fill factor by enlarging the photo-sensing area; on the other hand, it also raises the speed of readout, and is twice as fast as traditional single direction readout. In addition, we use a delta-difference sampling (DDS) for readout circuit to suppress the fixed pattern noise (FPN). The complete CMOS image sensor is implemented based on TSMC 0.35 μm 1P4M CMOS technology.
Keywords :
CMOS image sensors; image resolution; image sampling; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; interference suppression; photodetectors; readout electronics; 0.35 micron; 128 pixel; 16384 pixel; 3.3 V; CMOS active pixel sensor; CMOS image sensor circuits; TSMC 1P4M CMOS technology; delta-difference sampling; fill factor; fixed pattern noise suppression; image sensor; photo-sensing area; pixel-shared design; quantum efficiency; readout circuit; readout speed; sensor resolution; shared-pixel structure; single direction readout; split-path readout; split-path readout direction; CMOS image sensors; CMOS technology; Circuits; Image resolution; Image sensors; Photoconductivity; Photodetectors; Pixel; Space technology; Voltage;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010385
