Title :
GaN Technology for E, W and G-Band Applications
Author :
Margomenos, A. ; Kurdoghlian, A. ; Micovic, M. ; Shinohara, K. ; Brown, D.F. ; Corrion, A.L. ; Moyer, H.P. ; Burnham, S. ; Regan, D.C. ; Grabar, R.M. ; McGuire, C. ; Wetzel, M.D. ; Bowen, R. ; Chen, Patrick S. ; Tai, H.Y. ; Schmitz, A. ; Fung, H. ; Fung,
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
Abstract :
Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the first G-band GaN amplifier capable of producing output power density of 296mW/mm at 180 GHz. All these components were realized with a 40 nm T-gate process (ft= 200 GHz, fMAX= 400 GHz, Vbrk > 40V) which can enable the next generation of transmitter and receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability.
Keywords :
III-V semiconductors; gallium compounds; low noise amplifiers; millimetre wave power amplifiers; wide band gap semiconductors; E-band applications; G-band applications; GaN; GaN T-gate technology; GaN power amplifier; LNA; W-band applications; breakdown voltage; frequency 180 GHz; frequency 65 GHz to 110 GHz; power added efficiency; receiver components; transmitter components; ultrawideband low noise amplifier; Gallium nitride; HEMTs; Linearity; MMICs; Performance evaluation; Power amplifiers; Power generation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978559
