DocumentCode
180452
Title
GaN Technology in Base Stations - Why and When?
Author
Higham, Eric
Author_Institution
Strategy Analytics, Newton, MA, USA
fYear
2014
fDate
19-22 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
GaN technology for RF applications has been widely adopted in defense applications, but commercial acceptance has been much slower. Wireless base stations seemed like the most likely commercial early adopter of GaN, but this market has been slow to take off. This paper will review the material properties of GaN material and how these translate to device parameters. Developments with incumbent LDMOS technology, along with new linearization schemes will illustrate future direction for the wireless base station market. The paper will close with forecasts for the overall power market and how quickly GaN revenue will grow.
Keywords
MIS devices; gallium; nitrogen; GaN; RF applications; incumbent LDMOS technology; linearization schemes; wireless base station market; Bandwidth; Base stations; Computer architecture; Gallium nitride; Power amplifiers; Radio frequency; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location
La Jolla, CA
Type
conf
DOI
10.1109/CSICS.2014.6978560
Filename
6978560
Link To Document