• DocumentCode
    180452
  • Title

    GaN Technology in Base Stations - Why and When?

  • Author

    Higham, Eric

  • Author_Institution
    Strategy Analytics, Newton, MA, USA
  • fYear
    2014
  • fDate
    19-22 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    GaN technology for RF applications has been widely adopted in defense applications, but commercial acceptance has been much slower. Wireless base stations seemed like the most likely commercial early adopter of GaN, but this market has been slow to take off. This paper will review the material properties of GaN material and how these translate to device parameters. Developments with incumbent LDMOS technology, along with new linearization schemes will illustrate future direction for the wireless base station market. The paper will close with forecasts for the overall power market and how quickly GaN revenue will grow.
  • Keywords
    MIS devices; gallium; nitrogen; GaN; RF applications; incumbent LDMOS technology; linearization schemes; wireless base station market; Bandwidth; Base stations; Computer architecture; Gallium nitride; Power amplifiers; Radio frequency; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
  • Conference_Location
    La Jolla, CA
  • Type

    conf

  • DOI
    10.1109/CSICS.2014.6978560
  • Filename
    6978560