Title :
Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET)
Author :
Howell, Robert S. ; Stewart, Eric J. ; Freitag, Ron ; Parke, Justin ; Nechay, Bettina ; Cramer, Harlan ; King, Matthew ; Gupta, Swastik ; Hartman, Jeff ; Borodulin, Pavel ; Snook, Megan ; Wathuthanthri, Ishan ; Ralston, Parrish ; Renaldo, Karen ; Henry, H
Author_Institution :
Northrop Grumman Corp. (Electron. Syst.), Linthicum, MD, USA
Abstract :
A low loss, high isolation, broadband RF switch has been developed using a novel type of field effect transistor structure that exploits the use of a super-lattice structure in combination with a three dimensional, castellated gate to achieve excellent RF switch performance. Using an AlGaN/GaN super-lattice epitaxial layer, this Super-Lattice Castellated Field Effect Transistor (SLCFET) was used to build 1-18 GHz SPDT RF switches. Measured insertion loss of the SPDT at 10 GHz was -0.4 dB, with -35 dB of isolation and -23 dB of return loss, along with a measured linearity OIP3 value 62 dBm and a P0.1dB of 34 dBm.
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave switches; semiconductor epitaxial layers; semiconductor superlattices; wide band gap semiconductors; AlGaN-GaN; SLCFET; SPDT RF switches; frequency 1 GHz to 18 GHz; loss -0.4 dB; loss -23 dB; loss -35 dB; low loss high isolation broadband RF switch; low loss high performance SPDT; superlattice castellated field effect transistor; superlattice epitaxial layer; Field effect transistors; Insertion loss; Loss measurement; Radio frequency; Switches; Switching circuits; Transmission line measurements;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978566
