A 65nm CMOS current controlled oscillator with high tuning linearity for wideband polar modulation

Author

Tang, Yiwu ; Hu, Jianyun ; Park, Jongmin ; Choi, Jaehyouk ; Leung, Lincoln ; Narathong, Chiewcharn ; Sahota, Kamal

Author_Institution

Qualcomm Inc., San Diego, CA, USA

fYear

2012

fDate

9-12 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

A highly linear oscillator is presented for wideband polar modulation. It has both varactor voltage tuning for frequency locking and temperature compensation as well as inductive current tuning for linear phase modulation. Implemented in 65nm CMOS, it achieved a gain variation less than ±2% over more than 32MHz range meeting WCDMA polar modulation requirement. At 3.8GHz and 3MHz offset, its phase noise is -136.5dBc/Hz with current consumption of 18mA from 2.1V supply.

Keywords

CMOS integrated circuits; modulation; oscillators; varactors; CMOS current controlled oscillator; current 18 mA; frequency 3 MHz; frequency 3.8 GHz; frequency locking; high tuning linearity; inductive current tuning; linear phase modulation; size 65 nm; temperature compensation; varactor voltage tuning; voltage 2.1 V; wideband polar modulation; Inductors; Linearity; Modulation; Multiaccess communication; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2012 IEEE

Conference_Location

San Jose, CA

ISSN

0886-5930

Print_ISBN

978-1-4673-1555-5

Electronic_ISBN

0886-5930

Type

conf

DOI

10.1109/CICC.2012.6330598

Filename

6330598