Title :
Progress on Phase Separation Microfluidics
Author :
Agonafer, Damena D. ; Palko, James ; Yoonjin Won ; Lopez, Ken ; Dusseault, Tom ; Gires, Julie ; Asheghi, Mehdi ; Santiago, Juan G. ; Goodson, Kenneth E.
Author_Institution :
Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA
Abstract :
High power density GaN HEMT technology can increase the capability of defense electronics systems with the reduction of CSWaP. However, thermal limitations have currently limited the inherent capabilities of this technology where transistor-level power densities that exceed 10 kW/cm2 are electrically feasible. This paper introduces the concept of an evaporative microcooling device utilizing some of the current two-phase vapor separation technologies currently being developed for water and dielectric liquids.
Keywords :
III-V semiconductors; dielectric liquids; gallium compounds; high electron mobility transistors; microfluidics; wide band gap semiconductors; CSWa reduction; GaN; current two-phase vapor separation technologies; defense electronics systems; dielectric liquids; evaporative microcooling device; high power density HEMT technology; microfluidics; transistor-level power densities; water liquids; Copper; Films; HEMTs; Liquids; Resistance heating;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978575
