Single Chip RF Variable Gain Low Noise Amplifier

Author

Bin Hou ; Yibing Zhao ; Newman, Eamonn ; Shuyun Zhang

Author_Institution

Analog Devices Inc., Wilmington, MA, USA

fYear

2014

fDate

19-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

A monolithic integrated single chip RF variable gain low noise amplifier (VGLNA) based on GaAs BiFET technology is demonstrated in this work. The LNA could be operated from 700MHz to 3GHz. The measured NF is 1dB at both 975MHz and 1.75GHz. The gain of the VGLNA can be varied from a maximum of 36dB down to -13dB at 1.75GHz. Measured Output IP3 is 38.4dBm and measured Output 1dB compression is greater than 27dBm at 1.75GHz at maximum gain. The measured input return loss is better than 14dB across the full gain range. The single die VGLNA is implemented in a 5×5mm LFCSP package. It draws 265mA on a 5V supply.

Keywords

III-V semiconductors; chip scale packaging; field effect transistors; gallium arsenide; low noise amplifiers; monolithic integrated circuits; radiofrequency amplifiers; radiofrequency integrated circuits; GaAs; GaAs BiFET technology; LFCSP; RF variable gain low noise amplifier; VGLNA; current 265 mA; frequency 700 MHz to 3 GHz; lead frame chip scale package; monolithic integrated single chip; size 5 mm; voltage 5 V; Gain; Impedance matching; Noise; Noise figure; PHEMTs; Radio frequency; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE

Conference_Location

La Jolla, CA

Type

conf

DOI

10.1109/CSICS.2014.6978579

Filename

6978579