Title :
Status of the GaN HEMT Standardization Effort at the Compact Model Coalition
Author :
Mertens, Samuel D.
Author_Institution :
Keysight EEsof EDA, Santa Clara, CA, USA
Abstract :
The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; standardisation; wide band gap semiconductors; GaN; HEMT standardization; compact model coalition; high electron mobility transistors; silicon integration initiative; Gallium nitride; HEMTs; Integrated circuit modeling; Semiconductor device modeling; Semiconductor process modeling; Standards;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978580