DocumentCode :
180496
Title :
The Impact of Electro-Thermal Coupling on HBT Power Amplifiers
Author :
Ozalas, Matthew T.
Author_Institution :
Keysight Technol., Santa Rosa, CA, USA
fYear :
2014
fDate :
19-22 Oct. 2014
Firstpage :
1
Lastpage :
4
Abstract :
Thermal issues pose significant challenges for today´s RF power amplifier designs. Recently, layout-based electro-thermal simulation tools have become widely available across the industry. While these tools are most commonly used for device-level reliability and lifetime verification, electro-thermal simulation can also enable engineers to gain new insight into the performance effects that are brought on by cross-circuit thermal coupling in RF power amplifiers. This paper describes the use of electro-thermal simulation to understand, predict, and account for cross-circuit thermal coupling in a commercial HBT power amplifier. Specifically, electro-thermal analysis is used to analyze how thermal coupling impacts gain compression and low frequency memory effects.
Keywords :
heterojunction bipolar transistors; radiofrequency power amplifiers; semiconductor device models; semiconductor device reliability; HBT power amplifiers; RF power amplifier; cross-circuit thermal coupling; device level reliability; electrothermal analysis; electrothermal coupling; gain compression; layout-based electrothermal simulation tools; lifetime verification; low frequency memory effects; Couplings; Heterojunction bipolar transistors; Integrated circuit modeling; Power amplifiers; Radio frequency; Temperature; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
Type :
conf
DOI :
10.1109/CSICS.2014.6978582
Filename :
6978582
Link To Document :
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