W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Author

Margomenos, A. ; Kurdoghlian, A. ; Micovic, M. ; Shinohara, K. ; Moyer, H. ; Regan, D.C. ; Grabar, R.M. ; McGuire, C. ; Wetzel, M.D. ; Chow, D.H.

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

fYear

2014

fDate

19-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, fT= 220 GHz, fmax= 400 GHz, Vbrk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter

Keywords

III-V semiconductors; gallium compounds; low noise amplifiers; microwave phase shifters; microwave receivers; semiconductor devices; wide band gap semiconductors; GaN; LNA; SPDT; SPST; W band receiver components; frequency 220 GHz; frequency 400 GHz; loss 0.9 dB; loss 1.3 dB; low noise amplifier; next generation device technology; reflective type phase shifter; single pole double-throw switch; single pole single throw switch; Gain; Gallium nitride; Linearity; Performance evaluation; Phase shifters; Receivers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE

Conference_Location

La Jolla, CA

Type

conf

DOI

10.1109/CSICS.2014.6978585

Filename

6978585