Title :
Strain-dependent optical properties of mid-infrared GaInSb/GaInAlSb quantum well laser
Author :
Hasan, Md Mahbub ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
The optical properties of compressively strained GaInSb/GaInAlSb mid-infrared quantum well light sources are numerically studied solving one-dimensional Schrödinger equation using finite difference method. The simulation results demonstrate that band-mixing effects and effective mass of hole are reduced when the well is highly compressively strained. The strain-dependent optical and differential gains are evaluated for different values of strain and found maximum for 1.52% compressively strained quantum well. The emission wavelength for the proposed laser can be tuned from 2.39 μm to 2.27 μm due to change in compressive strain from 0.60% to 1.52%. The results obtained from PSPICE simulation, indicate that the optical output power and threshold current are strongly depend on the number of well and found to be almost constant for the number of well is three and above.
Keywords :
III-V semiconductors; Schrodinger equation; finite difference methods; gallium compounds; optical properties; quantum well lasers; stress effects; GaInSb-GaInAlSb; PSPICE simulation; band mixing effects; compressively strained midinfrared quantum well light source; finite difference method; midinfrared quantum well laser; one dimensional Schrodinger equation; strain dependent optical property; wavelength 2.39 mum to 2.27 mum; Dispersion; Mathematical model; Optical fiber sensors; Semiconductor lasers; Stimulated emission; Strain; Mid-infrared; conduction band; finite difference method; quantum well; valence band;
Conference_Titel :
Computer and Communication Engineering (ICCCE), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6233-9
DOI :
10.1109/ICCCE.2010.5556864