Title :
Present and future applications of Silicon Carbide devices and circuits
Author :
Zetterling, Carl-Mikael
Author_Institution :
Dept. of Integrated Devices & Circuits, KTH R. Inst. of Technol., Stockholm, Sweden
Abstract :
Silicon Carbide (SiC) is a wide bandgap semiconductor now reaching maturity. Discrete high-voltage SiC devices are commercially available from several suppliers for low-loss power conversion. Future applications may include integrated circuits for high-temperature and radiation-hard applications. This paper introduces SiC material properties, processing, devices, and circuits.
Keywords :
low-power electronics; monolithic integrated circuits; power integrated circuits; semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; SiC material properties; discrete high-voltage SiC device; high-temperature application; integrated circuit; low-loss power conversion; radiation-hard application; silicon carbide circuit; wide bandgap semiconductor; Doping; Junctions; Logic gates; Photonic band gap; Silicon; Silicon carbide; Substrates; Silicon carbide; high temperature; high voltage;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1555-5
Electronic_ISBN :
0886-5930
DOI :
10.1109/CICC.2012.6330619
