DocumentCode
1805418
Title
Effects of pulse repetition frequency on the immunity of silicon BJT against microwave interference
Author
Chen Xi ; Du Zhengwei ; Gong Ke
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing
Volume
2
fYear
2008
fDate
21-24 April 2008
Firstpage
488
Lastpage
490
Abstract
The microwave pulse interference may cause permanent damage to silicon bipolar junction transistor (BJT). The effects of pulse repetition frequency (PRF), one of the important parameters of microwave interferences, are studied in this paper. A theoretical model is proposed, on the basis of which an approximate formula is presented for typical low-power silicon BJT. A prediction made by the proposed formula concludes that, as PRF does not exceed several kHz, it has no obvious influence.
Keywords
microwave bipolar transistors; semiconductor device noise; bipolar junction transistor; microwave interference; microwave interferences; microwave pulse interference; pulse repetition frequency; silicon BJT; Electrodes; Electromagnetic heating; Frequency; Interference; Lattices; Microwave devices; Microwave transistors; Predictive models; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-1879-4
Electronic_ISBN
978-1-4244-1880-0
Type
conf
DOI
10.1109/ICMMT.2008.4540433
Filename
4540433
Link To Document