Title :
Effects of pulse repetition frequency on the immunity of silicon BJT against microwave interference
Author :
Chen Xi ; Du Zhengwei ; Gong Ke
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing
Abstract :
The microwave pulse interference may cause permanent damage to silicon bipolar junction transistor (BJT). The effects of pulse repetition frequency (PRF), one of the important parameters of microwave interferences, are studied in this paper. A theoretical model is proposed, on the basis of which an approximate formula is presented for typical low-power silicon BJT. A prediction made by the proposed formula concludes that, as PRF does not exceed several kHz, it has no obvious influence.
Keywords :
microwave bipolar transistors; semiconductor device noise; bipolar junction transistor; microwave interference; microwave interferences; microwave pulse interference; pulse repetition frequency; silicon BJT; Electrodes; Electromagnetic heating; Frequency; Interference; Lattices; Microwave devices; Microwave transistors; Predictive models; Silicon; Temperature;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540433
