DocumentCode
1805430
Title
Cryogenic study and modeling of IGBTs
Author
Caiafa, A. ; Wang, X. ; Hudgins, J.L. ; Santi, E. ; Palmer, P.R.
Author_Institution
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Volume
4
fYear
2003
fDate
15-19 June 2003
Firstpage
1897
Abstract
The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25°C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed.
Keywords
characteristics measurement; cryogenic electronics; insulated gate bipolar transistors; low-temperature techniques; power semiconductor switches; semiconductor device models; switching; -260 to 25 C; IGBT cryogenic study; IGBT forward conduction drop; IGBT modeling; IGBT switching characteristics; low junction temperature; physics-based model; trench-gate IGBT; turn-off characteristics; turn-on characteristics; Charge carrier processes; Cryogenics; Electron mobility; Impurities; Insulated gate bipolar transistors; Performance evaluation; Semiconductor devices; Temperature dependence; Temperature distribution; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual
ISSN
0275-9306
Print_ISBN
0-7803-7754-0
Type
conf
DOI
10.1109/PESC.2003.1217742
Filename
1217742
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