Title :
Cryogenic study and modeling of IGBTs
Author :
Caiafa, A. ; Wang, X. ; Hudgins, J.L. ; Santi, E. ; Palmer, P.R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25°C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed.
Keywords :
characteristics measurement; cryogenic electronics; insulated gate bipolar transistors; low-temperature techniques; power semiconductor switches; semiconductor device models; switching; -260 to 25 C; IGBT cryogenic study; IGBT forward conduction drop; IGBT modeling; IGBT switching characteristics; low junction temperature; physics-based model; trench-gate IGBT; turn-off characteristics; turn-on characteristics; Charge carrier processes; Cryogenics; Electron mobility; Impurities; Insulated gate bipolar transistors; Performance evaluation; Semiconductor devices; Temperature dependence; Temperature distribution; Testing;
Conference_Titel :
Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual
Print_ISBN :
0-7803-7754-0
DOI :
10.1109/PESC.2003.1217742
