• DocumentCode
    1805859
  • Title

    The electron temperature in nanostructures subjected to a high electric field

  • Author

    Arora, Vijay K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wilkes Univ., Wilkes-Barre, PA, USA
  • fYear
    2002
  • fDate
    19-21 Dec. 2002
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    The drift-diffusion characteristics that limit the drift velocity to thermal velocity, appropriate to the dimensionality of nanostructures, are described. The concept of a hot electron and its temperature in a given context is discussed and simple analytical expressions extracted. These contextual definitions include: energy temperature, mobility temperature, Einstein-relation temperature both under ac and dc conditions, quantum temperature, and two-band intrinsic temperature. The dependence on the electric field is given in each case and the role of electric-field-induced quantum emission is delineated.
  • Keywords
    electromigration; electron mobility; high field effects; hot carriers; nanostructured materials; quantum wells; Einstein-relation temperature; drift diffusion; drift velocity; electric field induced quantum emission; electron temperature; energy temperature; high electric field effect; hot electron; mobility temperature; nanostructure dimensionality; thermal velocity; Diffusion processes; Electric fields; Electromagnetic scattering; Electron mobility; Entropy; Nanostructures; Optical scattering; Particle scattering; Temperature; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
  • Print_ISBN
    0-7803-7578-5
  • Type

    conf

  • DOI
    10.1109/SMELEC.2002.1217764
  • Filename
    1217764