• DocumentCode
    1805905
  • Title

    A self-aligned InP/InGaAs/InP DHBT with hexagonal-shaped emitters

  • Author

    Zhao, Yan ; Zhang, Zheng ; Gao, Jianfeng

  • Author_Institution
    Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing Electron. Devices Inst., Nanjing
  • Volume
    2
  • fYear
    2008
  • fDate
    21-24 April 2008
  • Firstpage
    551
  • Lastpage
    553
  • Abstract
    InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1x10 mum have demonstrated a peak cutoff frequency fT of 170GHz. Typical BVCEO exceeds 8V.
  • Keywords
    amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-InGaAs; double heterojunction bipolar transistor; frequency 170 GHz; hexagonal-shaped emitter; self-aligned process; DH-HEMTs; Differential amplifiers; Etching; Heterojunction bipolar transistors; High power amplifiers; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Optical amplifiers; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-1879-4
  • Electronic_ISBN
    978-1-4244-1880-0
  • Type

    conf

  • DOI
    10.1109/ICMMT.2008.4540451
  • Filename
    4540451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1805905