Title :
Hydrogen gas production for electronic-grade polycrystalline silicon growth
Author :
Ismail, Hashim ; Hashi, Uda ; Ehsan, Abang Annuar
Author_Institution :
Technol. Park Malaysia, MIMOS Berhad, Kuala Lumpur, Malaysia
Abstract :
The production of polycrystalline silicon (polysilicon) requires several main feedstocks. Polysilicon is produced by the reaction of trichlorosilane, SiHCl3 (TCS) with hydrogen, H2. Trichlorosilane is produced in the TCS plant while hydrogen is produced in H2 plant. Hydrogen and oxygen can be produced from water using electricity through the process of electrolysis. The purification or rectification of the H2 gas is typically done by passing an impure H2 stream over a heated palladium (Pd) alloy. The purity of H2 is then tested using a laboratory-constructed hydrogen gas purity test method which has been found to be at 99.9%.
Keywords :
chemical industry; chemical vapour deposition; crystal growth; electrolysis; elemental semiconductors; gas industry; gases; hydrogen; hydrogen economy; oxygen; purification; semiconductor growth; silicon; H2; H2 gas; O2; Si; electricity; electrolysis; electronic grade polycrystalline silicon growth; feedstocks; hydrogen gas production; laboratory constructed hydrogen gas purity test; oxygen gas; purification; rectification; Biomembranes; Chemical vapor deposition; Electrochemical processes; Electrons; Hydrogen; Partial discharges; Production; Raw materials; Semiconductor devices; Silicon;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217774
