Title :
Medium power amplifier design in SiGe BiCMOS 0.35-μm technology
Author :
Song, Jia-You ; Wang, Zhi-Gong ; Li, Zhi-qun ; Peng, Yan-Jun
Author_Institution :
Inst. of RF-& OE-ICs, Southeast Univ., Nanjing
Abstract :
A two-stage class-A medium power amplifier operated at 1.95 GHz is designed and fabricated in Jazz SiGe BiCMOS 0.35-mum technology. The circuit is fully integrated excluding the bias inductances and the output matching network. The simulated results indicate that the power amplifier can deliver a power of more than 141 mW (21.5 dBm) with a PAE of 24% under 3.3 V supply voltage. The IMD2 and IMD3 are less than -28 dBc and -44 dBc, respectively. The chip size is only 1.27 mm times 0.9 mm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; power amplifiers; SiGe BiCMOS; medium power amplifier; size 0.35 micron; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Impedance matching; Inductance; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon germanium; Voltage;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540458
