Title :
RF integrated inductor: Improving Q-factor with double ground shield for BiCMOS technology
Author :
Fonseca, L. ; Kretly, L.C.
Author_Institution :
Dept. of Microwave & Opt. - DMO, State Univ. of Campinas-UNICAMP, Campinas
Abstract :
This paper presents a technique to improve RF integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This method was compared with conventional inductors and improves Q- factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35 mum BiCMOS technology. This technique can be applied to any BiCMOS technology with no additional process.
Keywords :
BiCMOS integrated circuits; Q-factor; inductors; BiCMOS technology; Q-factor; RF integrated inductor; polysilicon; size 0.35 micron; Analytical models; BiCMOS integrated circuits; Coils; Eddy currents; Inductors; Magnetic separation; Q factor; Radio frequency; Shape; Solids; BiCMOS; Q-factor; double ground shield; inductor; n+buried layer; polysilicon;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540459
