Molecular dynamics simulation of Al grain boundary diffusion for electromigration failure analysis

Author

Shinzawa, Tsutomu ; Ohta, Toshiyuki

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

30

Lastpage

32

Abstract

The grain boundary (GB) diffusion for Al interconnections has been characterized for the first time by using the molecular dynamics (MD) simulation with the embedded atom potential. The activation energy for grain boundary diffusion is found to be 0.55 eV. The simulated GB diffusivity almost agrees with the experimental data in the literature (Baluffi and Blakely, Thin Solid Films, vol. 25. p. 363, 1975). The GB diffusivity is found to be suppressed by the compressive strain and to be highly dependent on the GB rotation angle

Keywords

aluminium; circuit simulation; electromigration; failure analysis; grain boundary diffusion; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; molecular dynamics method; 0.55 eV; Al; Al grain boundary diffusion; Al interconnections; GB diffusivity; GB rotation angle; activation energy; compressive strain; electromigration failure analysis; embedded atom potential; grain boundary diffusion; molecular dynamics simulation; Analytical models; Artificial intelligence; Atomic layer deposition; Atomic measurements; Capacitive sensors; Electromigration; Electrons; Failure analysis; Grain boundaries; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704743

Filename

704743