DocumentCode
1806618
Title
Study of interaction between the function of grit size and residual damage of an ultra thin wafer
Author
Wee, Cheong Yew ; San, Teo Bee
Author_Institution
Bayan Lepas Free Indus. Zone, Intel Technol. Sdn Bhd, Penang, Malaysia
fYear
2002
fDate
19-21 Dec. 2002
Firstpage
163
Lastpage
168
Abstract
Wafer thinning operation parameters such as grit size of grinding wheel, spindle speed, grinding chuck rotation speed, feed rate, grinding tape material, and wafer handling mechanism become more critical as the market is driving thinner wafers. The input parameter of the thinning process control the surface roughness and the residual damage. In this study, the relationship between grits size and surface roughness was investigated using UBM Laser-Profilometer. Warpage was measured at different temperatures using Infrared Fizeau Interferometry. It was shown that bigger grit causes higher surface roughness and surface roughness is directly related with surface damage, stress and warpage.
Keywords
elemental semiconductors; flip-chip devices; grinding; infrared spectra; internal stresses; silicon; surface roughness; Si; grinding chuck rotation speed; grinding tape material; grinding wheel; grit size; infrared Fizeau interferometry; laser-profilometry; residual damage; spindle speed; stress; surface damage; surface roughness; thinning process control; ultra thin wafer; wafer thinning; warpage; Feeds; Interferometry; Optical materials; Process control; Residual stresses; Rough surfaces; Surface emitting lasers; Surface roughness; Temperature measurement; Wheels;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN
0-7803-7578-5
Type
conf
DOI
10.1109/SMELEC.2002.1217797
Filename
1217797
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