DocumentCode :
1806618
Title :
Study of interaction between the function of grit size and residual damage of an ultra thin wafer
Author :
Wee, Cheong Yew ; San, Teo Bee
Author_Institution :
Bayan Lepas Free Indus. Zone, Intel Technol. Sdn Bhd, Penang, Malaysia
fYear :
2002
fDate :
19-21 Dec. 2002
Firstpage :
163
Lastpage :
168
Abstract :
Wafer thinning operation parameters such as grit size of grinding wheel, spindle speed, grinding chuck rotation speed, feed rate, grinding tape material, and wafer handling mechanism become more critical as the market is driving thinner wafers. The input parameter of the thinning process control the surface roughness and the residual damage. In this study, the relationship between grits size and surface roughness was investigated using UBM Laser-Profilometer. Warpage was measured at different temperatures using Infrared Fizeau Interferometry. It was shown that bigger grit causes higher surface roughness and surface roughness is directly related with surface damage, stress and warpage.
Keywords :
elemental semiconductors; flip-chip devices; grinding; infrared spectra; internal stresses; silicon; surface roughness; Si; grinding chuck rotation speed; grinding tape material; grinding wheel; grit size; infrared Fizeau interferometry; laser-profilometry; residual damage; spindle speed; stress; surface damage; surface roughness; thinning process control; ultra thin wafer; wafer thinning; warpage; Feeds; Interferometry; Optical materials; Process control; Residual stresses; Rough surfaces; Surface emitting lasers; Surface roughness; Temperature measurement; Wheels;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
Type :
conf
DOI :
10.1109/SMELEC.2002.1217797
Filename :
1217797
Link To Document :
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