• DocumentCode
    1806618
  • Title

    Study of interaction between the function of grit size and residual damage of an ultra thin wafer

  • Author

    Wee, Cheong Yew ; San, Teo Bee

  • Author_Institution
    Bayan Lepas Free Indus. Zone, Intel Technol. Sdn Bhd, Penang, Malaysia
  • fYear
    2002
  • fDate
    19-21 Dec. 2002
  • Firstpage
    163
  • Lastpage
    168
  • Abstract
    Wafer thinning operation parameters such as grit size of grinding wheel, spindle speed, grinding chuck rotation speed, feed rate, grinding tape material, and wafer handling mechanism become more critical as the market is driving thinner wafers. The input parameter of the thinning process control the surface roughness and the residual damage. In this study, the relationship between grits size and surface roughness was investigated using UBM Laser-Profilometer. Warpage was measured at different temperatures using Infrared Fizeau Interferometry. It was shown that bigger grit causes higher surface roughness and surface roughness is directly related with surface damage, stress and warpage.
  • Keywords
    elemental semiconductors; flip-chip devices; grinding; infrared spectra; internal stresses; silicon; surface roughness; Si; grinding chuck rotation speed; grinding tape material; grinding wheel; grit size; infrared Fizeau interferometry; laser-profilometry; residual damage; spindle speed; stress; surface damage; surface roughness; thinning process control; ultra thin wafer; wafer thinning; warpage; Feeds; Interferometry; Optical materials; Process control; Residual stresses; Rough surfaces; Surface emitting lasers; Surface roughness; Temperature measurement; Wheels;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
  • Print_ISBN
    0-7803-7578-5
  • Type

    conf

  • DOI
    10.1109/SMELEC.2002.1217797
  • Filename
    1217797