Title :
38 GHz low-power static frequency divider in SiGe bipolar technology
Author :
Ritzberger, Günter ; Böck, Josef ; Knapp, Herbert ; Treitinger, Ludung ; Scholtz, Arpad L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A low-power static frequency divider manufactured in 0.4 μm/85 GHz-fT SiGe bipolar technology with division ratios of 16 and 256 is presented. The circuit is optimized for low power consumption and operates up to 38.9 GHz maximum input frequency consuming only 174 mW from the 3 V supply.
Keywords :
Ge-Si alloys; MMIC frequency convertors; bipolar MMIC; circuit optimisation; frequency dividers; integrated circuit design; low-power electronics; 0.4 micron; 174 mW; 3 V; 38.9 GHz; SiGe; SiGe bipolar technology; circuit design; circuit optimization; division ratios; low power consumption; low-power static frequency divider; maximum input frequency; CMOS technology; Flip-flops; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Manufacturing; Master-slave; Mobile communication; Phase locked loops; Silicon germanium;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010479
