Title :
Highly reliable low-ϵ (3.3) SiOF HDP-CVD for subquarter-micron CMOS applications
Author :
Fukuda, Takuya ; Hosokawa, Takashi ; Sasaki, Eiji ; Kobayashi, Nobuyoshi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Highly stable SiOF films have been obtained by high-density-plasma CVD using fluorosilanes (SiF2H2 or SiF4-SiH4), and these films were applied as interlayer dielectrics in sub-quarter-micron devices. A dielectric constant (ε) of 3.3 and excellent film stability in terms of moisture absorption and permeability, as compared with a conventional TEOS film were obtained by optimizing the CVD conditions. The device applications showed no degradation in the threshold voltage or the hot carrier tolerance of CMOS devices
Keywords :
CMOS integrated circuits; dielectric thin films; hot carriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; moisture; permeability; permittivity; silicon compounds; CMOS applications; CMOS devices; SiF2H2; SiF2H2 precursor; SiF4-SiH4; SiF4-SiH4 precursors; SiOF-Si; TEOS film; dielectric constant; film stability; fluorosilanes; high-density-plasma CVD; hot carrier tolerance; interlayer dielectrics; moisture absorption; optimized CVD conditions; permeability; reliable low-k SiOF HDP-CVD layer; stable SiOF films; Absorption; Channel bank filters; Dielectric constant; Moisture; Permeability; Plasma devices; Plasma measurements; Plasma properties; Semiconductor films; Stability;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704746
