Highly reliable low-ϵ (3.3) SiOF HDP-CVD for subquarter-micron CMOS applications

Author

Fukuda, Takuya ; Hosokawa, Takashi ; Sasaki, Eiji ; Kobayashi, Nobuyoshi

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

42

Lastpage

44

Abstract

Highly stable SiOF films have been obtained by high-density-plasma CVD using fluorosilanes (SiF₂H₂ or SiF₄-SiH₄), and these films were applied as interlayer dielectrics in sub-quarter-micron devices. A dielectric constant (ε) of 3.3 and excellent film stability in terms of moisture absorption and permeability, as compared with a conventional TEOS film were obtained by optimizing the CVD conditions. The device applications showed no degradation in the threshold voltage or the hot carrier tolerance of CMOS devices

Keywords

CMOS integrated circuits; dielectric thin films; hot carriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; moisture; permeability; permittivity; silicon compounds; CMOS applications; CMOS devices; SiF₂H₂; SiF₂H₂ precursor; SiF₄-SiH₄; SiF₄-SiH₄ precursors; SiOF-Si; TEOS film; dielectric constant; film stability; fluorosilanes; high-density-plasma CVD; hot carrier tolerance; interlayer dielectrics; moisture absorption; optimized CVD conditions; permeability; reliable low-k SiOF HDP-CVD layer; stable SiOF films; Absorption; Channel bank filters; Dielectric constant; Moisture; Permeability; Plasma devices; Plasma measurements; Plasma properties; Semiconductor films; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704746

Filename

704746