DocumentCode
1806848
Title
Investigation of aluminium bondpad metal peeling failure
Author
Younan, Hua ; Shirley, Peh ; Chonh, Kee Sze ; Redkar, Shailes
Author_Institution
Chartered Semicond. Mfg Ltd., Singaproe, Singapore
fYear
2002
fDate
19-21 Dec. 2002
Firstpage
191
Lastpage
193
Abstract
Aluminium bondpad metal peeling due to the poor adhesion between the metal and underlying poly layer is presented. Failure analysis results showed that the non-uniformity of WSix layer is the root cause for the poor adhesion. In this paper, we will discuss the details of failure analysis using SEM, EDX, FIB, Auger and TEM. We will also report the corrective and preventive actions, which serve as a good reference to other wafer fab and assembly houses.
Keywords
Auger electron spectra; X-ray chemical analysis; aluminium; failure analysis; focused ion beam technology; lead bonding; scanning electron microscopy; transmission electron microscopy; tungsten compounds; Al; Auger effect; EDX; FIB; SEM; Si; TEM; WSi; WSix layer; adhesion; aluminium bondpad metal peeling failure analysis; wafer fabrication; Adhesives; Aluminum; Assembly; Bonding processes; Contamination; Fabrication; Failure analysis; Performance analysis; Sputtering; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN
0-7803-7578-5
Type
conf
DOI
10.1109/SMELEC.2002.1217804
Filename
1217804
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