DocumentCode
1806951
Title
A unified model and direct extraction methodologies of various CPWs for CMOS mm-wave applications
Author
Luo, Jun ; Zhang, Lei ; Wang, Yan
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2012
fDate
9-12 Sept. 2012
Firstpage
1
Lastpage
4
Abstract
In this paper, a novel unified model for various CPWs, including standard coplanar waveguides (CPW), grounded CPW (GCPW), CPW with slotted shield (SCPW), and corresponding direct extraction methodologies are proposed and investigated. In the SPICE-compatible model, a new C-L-R series path in the parallel branch is introduced to describe the electromagnetic coupling for CPWs with large lower ground or shield, while other kinds of high frequency effects including substrate loss, and skin effect are considered to explain the frequency-dependent per-unit-length Lx, Cx, Rx, and Gx parameters. The direct extraction procedure are established which can ensure both accuracy and simplicity compared with other reported methods. The model is verified by IBM 90nm CMOS processes with SLOT de-embedding techniques. Excellent agreement between the model and the measured data for different CPWs is achieved up to 67GHz. The direct extraction methodologies ensure the feasibility and availability of scalable modeling of CPWs for circuit designer.
Keywords
CMOS integrated circuits; coplanar waveguides; electromagnetic coupling; C-L-R series path; CMOS mm-wave application; GCPW; SCPW; SLOT deembedding technique; SPICE-compatible model; coplanar waveguide; direct extraction methodology; electromagnetic coupling; grounded CPW; high frequency effect; scalable modeling; size 90 nm; skin effect; slotted shield; substrate loss; CMOS integrated circuits; Coplanar waveguides; Integrated circuit modeling; Metals; Semiconductor device modeling; Solid modeling; Substrates; 67GHz; CMOS; CPWs; Unified model; direct extraction; mm-wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location
San Jose, CA
ISSN
0886-5930
Print_ISBN
978-1-4673-1555-5
Electronic_ISBN
0886-5930
Type
conf
DOI
10.1109/CICC.2012.6330676
Filename
6330676
Link To Document