Title :
Junctionless Tunnel Field Effect Transistor
Author :
Ghosh, Bablu ; Akram, M.W.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor (TFET). In this structure, the advantages of JLFET and TFET are combined together. The simulation results of JL-TFET with high-k dielectric material (TiO2) of 20-nm gate length shows excellent characteristics with high ION/IOFF ratio (~6×108), a point subthreshold slope (SS) of ~38 mV/decade, and an average SS of ~70 mV/decade at room temperature, which indicates that JL-TFET is a promising candidate for a switching performance.
Keywords :
dielectric materials; field effect transistors; metamaterials; semiconductor doping; silicon; titanium compounds; tunnel transistors; JL-TFET; P-gate; Si; Si-channel; TiO2; control-gate; double-gate junctionless tunnel field effect transistor; gate length; high-k dielectric material; isolated gate; metal work-function; n-type-doped junctionless field effect transistor; size 20 nm; subthreshold slope; switching performance; High-$k$ dielectric material; junctionless field effect transistor (JLFET); subthreshold slope (SS); tunnel field effect transistor (TFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2253752
