Title :
Hot carrier and soft breakdown reliability for RF circuits
Author :
Xiao, Enjun ; Yuan, Jim S. ; Yang, Hong
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
RF circuit performance degradations due to hot carrier (HC) and soft breakdown (SBD) effects are studied with 0.16 μm CMOS technology. Two design techniques are proposed to reduce the HC and SBD effects on RF circuits. A low noise amplifier (LNA) and a voltage-controlled oscillator (VCO) are used to verify the design techniques that can be used to build more reliable RF circuits.
Keywords :
CMOS integrated circuits; MOSFET; amplifiers; hot carriers; integrated circuit reliability; radiofrequency integrated circuits; voltage-controlled oscillators; 0.16 micron; CMOS technology; RF circuits; VCO; hot carrier; noise amplifier; soft breakdown reliability; voltage controlled oscillator; CMOS technology; Circuit noise; Circuit optimization; Degradation; Electric breakdown; Hot carriers; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage-controlled oscillators;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217816
