Title :
Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process
Author :
Valenta, Vaclav ; Ulusoy, A. Cagri ; Trasser, A. ; Schumacher, Hermann
Author_Institution :
Inst. of Electron Devices & Circuits, Ulm, Germany
Abstract :
A high-performance 110 GHz frequency quadrupler implemented in 0.13-μm BiCMOS process is presented. The designed circuit is to be employed in an FMCW imaging radar system and is based on a cascade of two Gilbert cells with tuned loads connected as squarers. The differential input signal that is used for validation of the realized quadrupler is generated using an active on-chip balun with a limiting differential amplifier. Measurement results of the circuit prove that this approach to mm-wave frequency generation can provide operation with up to 25 GHz bandwidth along with high output power of 0 dBm.
Keywords :
BiCMOS integrated circuits; CW radar; FM radar; Ge-Si alloys; baluns; bipolar MIMIC; carbon; differential amplifiers; frequency multipliers; millimetre wave frequency convertors; radar imaging; semiconductor materials; BiCMOS process; FMCW imaging radar system; Gilbert cells; SiGe:C; active on-chip balun; frequency 110 GHz; high-performance frequency quadrupler; limiting differential amplifier; mm-wave frequency generation; size 0.13 mum; wideband frequency quadrupler; Bandwidth; BiCMOS integrated circuits; Frequency measurement; Impedance matching; Limiting; Metals; Silicon germanium; Bipolar analog integrated circuits; Millimeter wave devices; Multiplying circuits;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489415
