Modeling, fabrication and measurement of TSVs for advanced integration of RF/high-speed components

Author

Lang, K.-D. ; Ndip, Ivan ; Guttowksi, S.

Author_Institution

Fraunhofer IZM, Berlin, Germany

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

12

Lastpage

14

Abstract

Through silicon vias (TSV) are modeled as metal-insulator-semiconductor structures in this paper. The slow-wave, dielectric quasi-TEM and skin-effect modes are discussed. Analytical expressions for calculating the electrical parameters of TSVs, which accurately capture the transition between the modes, are proposed. The TSVs are fabricated and measured. Good correlation is obtained between TSV parameters extracted from measurement and simulation.

Keywords

MIS structures; integrated circuit modelling; radiofrequency integrated circuits; radiofrequency measurement; RF-high-speed components; TSV electrical parameters; TSV fabrication; TSV measurement; TSV modeling; advanced integration; dielectric quasiTEM modes; metal-insulator-semiconductor structures; skin-effect modes; slow-wave modes; through silicon vias; Capacitance; Conductivity; Cutoff frequency; Dielectrics; Silicon; Through-silicon vias; Transmission line measurements; RF and high-speed; RLCG parameters; TSV; metal-insulator-semiconductor (MIS);

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489416

Filename

6489416