Title :
Modeling, fabrication and measurement of TSVs for advanced integration of RF/high-speed components
Author :
Lang, K.-D. ; Ndip, Ivan ; Guttowksi, S.
Author_Institution :
Fraunhofer IZM, Berlin, Germany
Abstract :
Through silicon vias (TSV) are modeled as metal-insulator-semiconductor structures in this paper. The slow-wave, dielectric quasi-TEM and skin-effect modes are discussed. Analytical expressions for calculating the electrical parameters of TSVs, which accurately capture the transition between the modes, are proposed. The TSVs are fabricated and measured. Good correlation is obtained between TSV parameters extracted from measurement and simulation.
Keywords :
MIS structures; integrated circuit modelling; radiofrequency integrated circuits; radiofrequency measurement; RF-high-speed components; TSV electrical parameters; TSV fabrication; TSV measurement; TSV modeling; advanced integration; dielectric quasiTEM modes; metal-insulator-semiconductor structures; skin-effect modes; slow-wave modes; through silicon vias; Capacitance; Conductivity; Cutoff frequency; Dielectrics; Silicon; Through-silicon vias; Transmission line measurements; RF and high-speed; RLCG parameters; TSV; metal-insulator-semiconductor (MIS);
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489416
