DocumentCode
1807298
Title
Analysis of Quantum Mechanical (QM) charge redistribution effects in MOSFETs on circuit performance
Author
Mutlu, Ayhan A. ; Gunther, Norman G. ; Rahman, Mahmud
Author_Institution
Dept. of Electr. Eng., Santa Clara Univ., CA, USA
fYear
2002
fDate
19-21 Dec. 2002
Firstpage
287
Lastpage
290
Abstract
In this work we present the QM charge redistribution effects in transistors on some circuit performance metrics such as delay and average power dissipation. The correction factors due to QM effects have been incorporated into the input variables of BSIM parameter extractor. The circuit performance effects of random dopant induced threshold voltage fluctuations are also presented. Monte Carlo methods have been utilized to analyze the circuit effects of these fluctuations.
Keywords
CMOS integrated circuits; MOSFET circuits; Monte Carlo methods; current fluctuations; curve fitting; delay circuits; doping profiles; quantum theory; semiconductor device models; MOSFETs; Monte Carlo methods; delay; power dissipation; quantum mechanical charge redistribution effects; random dopant effects; threshold voltage fluctuations; Circuit analysis; Circuit optimization; Delay effects; Fluctuations; Input variables; MOSFETs; Performance analysis; Power dissipation; Quantum mechanics; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN
0-7803-7578-5
Type
conf
DOI
10.1109/SMELEC.2002.1217827
Filename
1217827
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