A theoretical analysis of double heterojunction bipolar transistors with composite collectors

Author

Goh, Yu Ling ; Ong, Duu Sheng

Author_Institution

Fac. of Eng., Multimedia Univ., Selangor, Malaysia

fYear

2002

fDate

19-21 Dec. 2002

Firstpage

304

Lastpage

307

Abstract

The current transport mechanism of the GaInP/GaAs double heterojunction bipolar transistor with composite collector is analyzed using transmission and reflection model including tunneling effects. The effects of the variation in the thickness and doping level of the composite layers of the DHBT are investigated by assuming the electrons travel through the heterojunction ballistically.

Keywords

III-V semiconductors; ballistic transport; composite materials; doping profiles; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; light transmission; semiconductor device models; DHBT theoretical analysis; GaInP-GaAs; GaInP/GaAs double heterojunction bipolar transistor; composite collectors; composite layers; current transport properties; doping level; heterojunction ballistics; reflection model; transmission model; tunneling effects; Current density; Doping; Double heterojunction bipolar transistors; Electron emission; Gallium arsenide; Photonic band gap; Reflection; Semiconductor process modeling; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on

Print_ISBN

0-7803-7578-5

Type

conf

DOI

10.1109/SMELEC.2002.1217831

Filename

1217831