Title :
A theoretical analysis of double heterojunction bipolar transistors with composite collectors
Author :
Goh, Yu Ling ; Ong, Duu Sheng
Author_Institution :
Fac. of Eng., Multimedia Univ., Selangor, Malaysia
Abstract :
The current transport mechanism of the GaInP/GaAs double heterojunction bipolar transistor with composite collector is analyzed using transmission and reflection model including tunneling effects. The effects of the variation in the thickness and doping level of the composite layers of the DHBT are investigated by assuming the electrons travel through the heterojunction ballistically.
Keywords :
III-V semiconductors; ballistic transport; composite materials; doping profiles; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; light transmission; semiconductor device models; DHBT theoretical analysis; GaInP-GaAs; GaInP/GaAs double heterojunction bipolar transistor; composite collectors; composite layers; current transport properties; doping level; heterojunction ballistics; reflection model; transmission model; tunneling effects; Current density; Doping; Double heterojunction bipolar transistors; Electron emission; Gallium arsenide; Photonic band gap; Reflection; Semiconductor process modeling; Thermionic emission; Tunneling;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217831
