MMIC development for Local Multipoint Distribution Service (LMDS)

Author

Ariffin, Azzemi ; Jaafar, Salizul ; Bujan, Suhandi

Author_Institution

Telekom Res. & Dev. Sdn. Bhd., UKM-MTDC, Selangor, Malaysia

fYear

2002

fDate

19-21 Dec. 2002

Firstpage

308

Lastpage

313

Abstract

This paper covers a few Monolithic Microwave Integrated Circuit (MMIC) design using the Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (p-HEMT) technology to be used in Local Multipoint Distribution Service (LMDS) system. Three different sections describe in brief the design approach and methodology involved in each RF circuit design especially in stabilizing circuitry and meeting the small and large signal specifications.

Keywords

MMIC; gallium arsenide; high electron mobility transistors; integrated circuit design; GaAs; HEMT; MMIC development; RF circuit design; gallium arsenide; local multipoint distribution service; methodology; monolithic microwave integrated circuit design; pseudomorphic high electron mobility transistor; Electron mobility; Gallium arsenide; HEMTs; Integrated circuit technology; MMICs; MODFETs; Microwave integrated circuits; Microwave transistors; Monolithic integrated circuits; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on

Print_ISBN

0-7803-7578-5

Type

conf

DOI

10.1109/SMELEC.2002.1217832

Filename

1217832

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1807430