Title :
30 dBm P1db and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology
Author :
Sonnerat, F. ; Pilard, Romain ; Gianesello, Frederic ; Jan, Sen ; Pennec, F.L. ; Person, C. ; Durand, C. ; Gloria, Daniel
Author_Institution :
STMicroelectron., Silicon Technol. Dev., Crolles, France
Abstract :
In order to counteract the antenna impedance mismatch due to its interaction with the environment, one solution is to add an antenna tuner between the front-end module and the antenna. In this paper, we present the large signal measurement of a 4G integrated antenna tuner, previously presented in [1]. The tuner has been realized in STMicroelectronics 130 nm CMOS SOI technology and operates between 2500 MHz and 2690 MHz. We also propose some improvement to reduce the design parasitics, illustrated by the small signal performances of the optimized circuit.
Keywords :
4G mobile communication; CMOS integrated circuits; UHF antennas; UHF integrated circuits; mobile antennas; silicon-on-insulator; STMicroelectronics CMOS SOI technology; antenna impedance mismatch; frequency 2500 MHz to 2690 MHz; front-end module; insertion losses; large signal measurement; loss 4 dB; optimized 4G integrated antenna tuner; optimized circuit; size 130 nm; small signal performances; Antenna measurements; Antennas; CMOS integrated circuits; Insertion loss; Loss measurement; Metals; Tuners; 4G-LTE applications; CMOS SOI technology; Embedded antenna tuner; large signal measurement; small signal measurement;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489425
