Title :
A GaN MOSFET supply modulator compatible with feed forward loop for wideband envelope tracking power amplifier
Author :
Zhancang Wang ; Li Wang ; Rui Ma ; Lanfranco, Sandro
Author_Institution :
Nokia Siemens Networks, CTO Res., Beijing, China
Abstract :
In this paper, a novel supply modulator for envelope tracking power amplifier was presented, which boosts operation bandwidth capability to tracking up to LTE 60MHz by utilizing GaN MOSFET and compatible with feed forward loop to linearize the modulator for wideband, realizing high efficiency trading off linearity as well.
Keywords :
III-V semiconductors; Long Term Evolution; MOSFET; VHF amplifiers; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; LTE; MOSFET supply modulator; feedforward loop; frequency 60 MHz; wideband envelope tracking power amplifier; Feeds; Gallium nitride; MOSFET; Modulation; Nonlinear distortion; Power amplifiers; Switches; Compound semiconductor; GaN MOSFET; energy efficiency; power amplifiers; power supplies;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489426
