• DocumentCode
    1807523
  • Title

    A GaN MOSFET supply modulator compatible with feed forward loop for wideband envelope tracking power amplifier

  • Author

    Zhancang Wang ; Li Wang ; Rui Ma ; Lanfranco, Sandro

  • Author_Institution
    Nokia Siemens Networks, CTO Res., Beijing, China
  • fYear
    2013
  • fDate
    21-23 Jan. 2013
  • Firstpage
    42
  • Lastpage
    44
  • Abstract
    In this paper, a novel supply modulator for envelope tracking power amplifier was presented, which boosts operation bandwidth capability to tracking up to LTE 60MHz by utilizing GaN MOSFET and compatible with feed forward loop to linearize the modulator for wideband, realizing high efficiency trading off linearity as well.
  • Keywords
    III-V semiconductors; Long Term Evolution; MOSFET; VHF amplifiers; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; LTE; MOSFET supply modulator; feedforward loop; frequency 60 MHz; wideband envelope tracking power amplifier; Feeds; Gallium nitride; MOSFET; Modulation; Nonlinear distortion; Power amplifiers; Switches; Compound semiconductor; GaN MOSFET; energy efficiency; power amplifiers; power supplies;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4673-1552-4
  • Electronic_ISBN
    978-1-4673-1551-7
  • Type

    conf

  • DOI
    10.1109/SiRF.2013.6489426
  • Filename
    6489426