• DocumentCode
    1807545
  • Title

    Comparison between a Ti cap cobalt silicide to a flashed Ti-Ti cap cobalt silicide

  • Author

    Lim, C.O. ; Jamal, Z. ; Aziz, A. Abdul ; Hassan, Z.

  • Author_Institution
    Sch. of Phy., Univ. Sains Malaysia, Penang, Malaysia
  • fYear
    2002
  • fDate
    19-21 Dec. 2002
  • Firstpage
    329
  • Lastpage
    332
  • Abstract
    Cobalt silicide is used at contacts to reduce contact resistance and provide a low sheet resistance on gate, source and drain. This will improve device speed (lower RC delay). A titanium cap cobalt silicide (Ti/Co/Si) and flashed titanium-titanium cap cobalt silicide (Ti/Co/Ti/Si) solid phase epitaxy (SPE) are compared. Results revealed a transition from polycrystalline CoSi2 to epitaxial CoSi2 both in the (111) orientation if a flashed titanium is incorporated. The CoSi2 nucleation temperature is decreased with the addition of flashed titanium.
  • Keywords
    cobalt compounds; contact resistance; epitaxial layers; nucleation; titanium; (111) orientation; Ti-Co-Ti-Si; contact resistance; device speed; epitaxial CoSi2; flashed Ti-Ti cap cobalt silicide; nucleation temperature; polycrystalline CoSi2; sheet resistance; solid phase epitaxy; Annealing; Cobalt; Conductivity; Contact resistance; Scanning electron microscopy; Silicides; Temperature; Thermal resistance; Titanium; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
  • Print_ISBN
    0-7803-7578-5
  • Type

    conf

  • DOI
    10.1109/SMELEC.2002.1217836
  • Filename
    1217836
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1807545