DocumentCode :
1807545
Title :
Comparison between a Ti cap cobalt silicide to a flashed Ti-Ti cap cobalt silicide
Author :
Lim, C.O. ; Jamal, Z. ; Aziz, A. Abdul ; Hassan, Z.
Author_Institution :
Sch. of Phy., Univ. Sains Malaysia, Penang, Malaysia
fYear :
2002
fDate :
19-21 Dec. 2002
Firstpage :
329
Lastpage :
332
Abstract :
Cobalt silicide is used at contacts to reduce contact resistance and provide a low sheet resistance on gate, source and drain. This will improve device speed (lower RC delay). A titanium cap cobalt silicide (Ti/Co/Si) and flashed titanium-titanium cap cobalt silicide (Ti/Co/Ti/Si) solid phase epitaxy (SPE) are compared. Results revealed a transition from polycrystalline CoSi2 to epitaxial CoSi2 both in the (111) orientation if a flashed titanium is incorporated. The CoSi2 nucleation temperature is decreased with the addition of flashed titanium.
Keywords :
cobalt compounds; contact resistance; epitaxial layers; nucleation; titanium; (111) orientation; Ti-Co-Ti-Si; contact resistance; device speed; epitaxial CoSi2; flashed Ti-Ti cap cobalt silicide; nucleation temperature; polycrystalline CoSi2; sheet resistance; solid phase epitaxy; Annealing; Cobalt; Conductivity; Contact resistance; Scanning electron microscopy; Silicides; Temperature; Thermal resistance; Titanium; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
Type :
conf
DOI :
10.1109/SMELEC.2002.1217836
Filename :
1217836
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1807545
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