Studies on the a-C:B films prepared by PLD using camphoric carbon target

Author

Rusop, M. ; Nezasa, T. ; Kinugawa, T. ; Soga, T. ; Jimbo, T.

Author_Institution

Dept. of Environ. Technol. & Urban Planning, Nagoya Inst. of Technol., Japan

fYear

2002

fDate

19-21 Dec. 2002

Firstpage

338

Lastpage

342

Abstract

The boron (B) doped amorphous carbon (a-C:B) films have been grown by pulsed laser deposition (PLD) using camphoric carbon target at room temperature. The deposited films have been investigated using standard measurement techniques and the effects of B percentages by weight in the target (Bwt%) are discussed. The variation of structural properties, optical gap (E_g) and electrical resistivity (ρ) are related to successful doping of B for low content of B in the amorphous carbon (a-C) films as the structural and E_g remain almost unchanged, and the ρ decreased till for the film deposited at 10 Bwt%. Since both the E_g and ρ are decreased sharply with higher Bwt%, this phenomenon can be related due to the graphitization.

Keywords

amorphous semiconductors; boron; carbon; electrical resistivity; energy gap; graphitisation; noncrystalline structure; optical constants; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; 293 to 298 K; C:B; PLD; boron doped amorphous carbon films; camphoric carbon target; electrical resistivity; graphitization; optical gap; pulsed laser deposition; room temperature; structural properties; Amorphous materials; Boron; Doping; Electric resistance; Measurement standards; Measurement techniques; Optical films; Optical pulses; Pulsed laser deposition; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on

Print_ISBN

0-7803-7578-5

Type

conf

DOI

10.1109/SMELEC.2002.1217838

Filename

1217838