Studies on the a-C:B films prepared by PLD using camphoric carbon target

The boron (B) doped amorphous carbon (a-C:B) films have been grown by pulsed laser deposition (PLD) using camphoric carbon target at room temperature. The deposited films have been investigated using standard measurement techniques and the effects of B percentages by weight in the target (Bwt%) are discussed. The variation of structural properties, optical gap (E_g) and electrical resistivity (ρ) are related to successful doping of B for low content of B in the amorphous carbon (a-C) films as the structural and E_g remain almost unchanged, and the ρ decreased till for the film deposited at 10 Bwt%. Since both the E_g and ρ are decreased sharply with higher Bwt%, this phenomenon can be related due to the graphitization.